半球形基底镀膜膜厚均匀性理论分析:半球形基底镀膜膜厚均匀性理论分析
Theory Analysis of Vacuum Evaporation of Thin Film with Uniform
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作 者:吴伟 王济洲 熊玉卿 王多书 冯煜东
Wu Wei, Wang Jizhou ,Xiong Yuqing, Wang Duoshu, Feng Yudong ( Science and Technology on Surface Engineering Laboratory, Ianzhou Institute of Space Technology and Physics, Ianzhou 730000, China)
机构地区:兰州空间技术物理研究所表面工程技术重点实验室,兰州730000
出 处:《真空科学与技术学报》 EI CSCD 2014年第4期 320-324页,共5页
JOurnal of Vacuum Science and Technology
基 金:重点实验室基金重点项目(9140C540302120c5401)
摘 要:对特殊的非平面基片一半球表面上镀制薄膜的膜厚均匀性进行了理论分析研究。首先,推导了半球面静止时球面各点的膜厚方程以及此时半球面能够镀膜的区域。然后推算了半球表面沿通过球心竖直方向的轴转动后球面各位置处的膜厚方程,另外当蒸发源与球心的水平距离小于半球面半径时,存在一定区域无法镀膜,对该区域进行了理论计算。最后通过计算相对膜厚分析了半球表面膜层厚度分布情况。选择合适的蒸发源与基底间的几何配置可获得小范围内相对较为均匀的镀膜区域。该研究工作对半球面这种复杂的非平面基片上镀膜膜厚均匀性研究工作具有理论指导意义,同时对改善此种表面上的膜厚分布研究提供了相关的理论依据。
The synthesis of coatings,grown by vacuum evaporation on hemispherical substrate, was physically mod-eled and analytically investigated. First, the formulae, describing the film thickness distribution deposited with a point-sottrceon the stationary substrate, were derived. Next,the film thickness distribution on the substrate spinning on its verti- cal axis was calculated. And fmally, with these formulae the uniformity of film thickness distribution on the hemispherical surface was calculated by evaluating the relative film thickness. The "blind"area on substrate was evaluated, where the film fails to be deposited because the distance between the evaporation source and substrate center(with h and n denoting the vertical and horizontal components of the distance, respectively) is smaller than substrate radius( R ). The calculated results show that the source geometry and ratios of h/R and n/R strongly affect the film thickness distribution. We sug-gest that when it comes to growth of film with uniform thicknessin a small area,an optimized alignment of the hemispheri- cal substrate and a right type of source may do a good job.
关键词:膜厚均匀性 半球形基底 真空镀膜 理论分析
Thickness unifomaity, Hemispherical substrate, Film deposition, Theory analysis ;
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