硅单晶抛光片边缘亮线研究:硅单晶抛光片边缘亮线研究
Research of Light Point Defects on Polished Silicon Wafer Edge
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作 者:王云彪 杨洪星 陈亚楠 张伟才
WANG Yun-biao, YANG Hong-xing, CHEN Ya-nan, ZHANG Wei-cai ( The 46th Research Institute of CETC, Tianjin 300220, China )
机构地区:中国电子科技集团公司第四十六研究所,天津300220
出 处:《电子工艺技术》 2014年第5期 298-302页,共5页
Electronics Process Technology
基 金:天津市青年基金项目(项目编号:12JCQNJC01700).
摘 要:随着集成电路用晶圆向大尺寸化方向发展,国内10~15 cm硅抛光片市场竞争日益激烈,外延及器件厂家对抛光片的表面质量和可利用率要求越来越高。边缘亮线是一种存在于硅片抛光面边缘的腐蚀缺陷,对抛光片的成品率及后续工艺质量有重要影响。通过对硅片边缘表面形貌进行微观分析,揭示了“边缘亮线”产生的机理,分别研究了抛光工艺条件和倒角工艺条件对边缘缺陷的影响,通过优化抛光工艺条件,消除了抛光片表面“边缘亮线”缺陷。
With the development of integrated circuit wafer to the large size, the domestic 10~15 cm silicon wafer market competition is becoming increasingly fierce, the epitaxy and the device manufacturers demand better surface quality and higher availability. Edge Bright Line is corrosion defects existing in the edge of polishing wafer surface, have an important influence on the polishing wafer yield and subsequent process quality. Through the micro analysis of the edge of the wafer surface, revealed the Edge Line mechanism, the influence of polishing process conditions and grinding process conditions on the edge defects were studied, by optimizing the polishing process conditions, eliminated the Edge Bright Line defects on polished wafers.
关键词:边缘亮线 表面形貌 成品率 抛光片