半导体拉曼激光器驱动设计及试验:半导体拉曼激光器驱动设计及试验
Design of semiconductor raman laser driver
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作 者:阮斌 高鹏飞 贾南南 陶振强
RUAN Bin, GAO Peng-fei, JIA Nan-nan, TAO Zhen-qiang ( School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China)
机构地区:上海理工大学光电信息与计算机工程学院,上海200093
出 处:《信息技术》 2015年第39卷第3期 33-35页,39页,共4页
Information Technology
基 金:国家自然科学基金项目(61178079); 霍英东教育基金会青年教师基金项目(121010)
摘 要:在拉曼光谱仪中,激光驱动电路直接影响半导体拉曼激光器的稳定性,从而影响拉曼检测效果。提出了一种高稳定性、功率大范围可调的激光驱动电路,利用采样电阻和电流驱动电路形成闭环控制,保持电流恒定,利用热敏电阻和温度控制电路形成闭环控制,保持温度恒定,利用光电二极管和整个恒流控制电路形成闭环控制,保持输出功率稳定,同时该驱动电路可利用单片机数模转换实现电流和温度的精确调整。对Santur公司的785纳米半导体激光器进行测试,验证了驱动电流可大范围调控。设置温度30摄氏度,激光功率300毫瓦,连续三个小时观察功率变化在±1.5毫瓦之内,表明该驱动电路可以稳定地为拉曼光谱仪提供支持。
Semiconductor laser driver affects the stability of Raman laser directly,then affects the effect of Raman detector. A semiconductor laser driver with high efficiency,high stability and large power-scale was presented,which maintains a constant current with a closed-loop formed by sampling resistance and current driver,maintains stable temperature with a closed-loop formed by the thermistors and temperature control circuit,maintains stable power with a closed-loop formed by photodiode and constant current control circuit,which also adjusts current and temperature with MCU precisely. A test with Santur's785nm laser at 30℃ and 300 m Windicated power-change ranged between ± 1. 5mW,which met the requirements of Raman detector steady.
关键词:半导体拉曼激光器 驱动电路 电流 温度 稳定性
semiconductor laser ; driving circuit ; current ; temperature ; stability ;